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AOB7S60 |
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| Part Number | AOB7S60 |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | Product Summary The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switchin... |
| Features |
epetitive avalanche energy C
Single pulsed avalanche energy G
ID
IDM IAR EAR EAS
7 5
33 1.7 43 86
7* 5*
TC=25°C Power Dissipation B Derate above 25oC
PD
104 0.8
34 0.3
MOSFET dv/dt ruggedness Peak diode recovery dv/dt H
dv/dt
100 20
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
300
Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A
Symbol RθJA RθCS
AOT7S60/AOB7S60 65 0.5
AOTF7S60L 65 --
Maximum Junction-to-Case
RθJC
* Drain current limited... |
| Document |
 AOB7S60 Data Sheet
PDF 288.81KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AOB7S60 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | AOB7S65 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | AOB7S65L |
INCHANGE |
N-Channel MOSFET |
|
| 4 | AOB7S65L |
Alpha & Omega Semiconductors |
Power Transistor |
|
| 5 | AOB780A70L |
Alpha & Omega Semiconductors |
N-Channel Power Transistor |
|
| 6 | AOB095A60L |
Alpha & Omega Semiconductors |
N-Channel Power Transistor |
|
| 7 | AOB10B60D |
Alpha & Omega Semiconductors |
10A Alpha IGBT |
|
| 8 | AOB10B65M1 |
Alpha & Omega Semiconductors |
10A Alpha IGBT |
|
| 9 | AOB10N60 |
Alpha & Omega Semiconductors |
10A N-Channel MOSFET |
|
| 10 | AOB10N60 |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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