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BD138 |
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| Part Number | BD138 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | BD136 BD138 IBD140I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD135, BD137 and BD139 7.9 MAX. Unit in mm MAXIMUM... |
| Features |
. Designed for Complementary Use with BD135, BD137
and BD139
7.9 MAX.
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL
Collector-Base Voltage
BD136 BD138 BD140
VCBO
Collector-Emitter Voltage
BD136 BD138 BD140
Emitter-Base Voltage
Collector Current
DC Peak
Collector Power Dissipation
Ta=25°C Tc^60°C
VcEO
VEBO
ic ICM
Junction Temperature
Storage Temperature Range
L stg
RATING -45 -60 -80 -45 -60 -80 -5
-0.5 -1.5
6.5 150
-55-150
UNIT
1. EMITTER 2. COLLECTOR (HEAT SINK) Z. BASE
TO— 126 TOSHIBA Weight : 0.72g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBO... |
| Document |
 BD138 Data Sheet
PDF 104.92KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD130 |
Comset Semiconductors |
NPN Silicon Transistor |
|
| 2 | BD130 |
Solitron Devices |
NPN Silicon Power |
|
| 3 | BD13003B |
SeCoS |
NPN Plastic Encapsulated Transistor |
|
| 4 | BD131 |
INCHANGE |
NPN Transistor |
|
| 5 | BD131 |
NXP |
NPN power transistor |
|
| 6 | BD131 |
Comset Semiconductors |
SILICON PLANAR EPITAXIAL POWER TRANSISTORS |
|
Desde 2024. D4U Semiconductor.
|