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BFS466L6 |
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| Part Number | BFS466L6 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | BFS466L6 NPN Silicon RF TWIN Transistor Preliminary data • Low voltage/ low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure: TR1: 1.1dB at 1.8 GHz TR2: 1.0 dB ... |
| Features |
TR2 Thermal Resistance Parameter Junction - soldering point 2) TR1 TR2
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol
IB
Value 5 4
Unit mA
Ptot
mW 200 210
Tj
°C 150 150
TA
-65 ... 150 -65 ... 150
T stg
-65 ... 150 -65 ... 150 Symbol
RthJS ≤ 230 ≤ 230
Value
Unit K/W
2
Sep-01-2003
BFS466L6
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage TR1, IC = 1 mA, IB = 0 TR2, IC =... |
| Document |
 BFS466L6 Data Sheet
PDF 85.37KB |
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