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BUT12AI |
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| Part Number | BUT12AI |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverter... |
| Features |
ith the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 450 8 20 4 6 110 150 150 UNIT V V A A A A W ˚C ˚C
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. MAX. 1.15 60... |
| Document |
 BUT12AI Data Sheet
PDF 65.30KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUT12A |
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| 2 | BUT12A |
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| 3 | BUT12AF |
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| 4 | BUT12AF |
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| 5 | BUT12AF |
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| 6 | BUT12AX |
INCHANGE |
NPN Transistor |
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Desde 2024. D4U Semiconductor.
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