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K2919 |
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| Part Number | K2919 |
| Manufacturer | Sanyo |
| Description | Ordering number:ENN6121 N-Channel Silicon MOSFET 2SK2919 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · On-chip high-speed diode (trr=100ns). Pa... |
| Features |
· Low ON resistance. · Ultrahigh-speed switching. · On-chip high-speed diode (trr=100ns). Package Dimensions unit:mm 2128 [2SK2919] 8.2 7.8 6.2 3 0.6 4.2 0.4 0.2 1.2 8.4 10.0 0.7 12 1.0 1.0 2.54 2.54 5.08 10.0 6.0 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Tc=25°C Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Drain-to-Source Breakd... |
| Document |
 K2919 Data Sheet
PDF 100.29KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K2915 |
Toshiba Semiconductor |
2SK2915 |
|
| 2 | K2917 |
Toshiba Semiconductor |
2SK2917 |
|
| 3 | K2900-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 4 | K2902-01MR |
Fuji Electric |
2SK2902-01MR |
|
| 5 | K2925 |
Hitachi |
Silicon N-Channel MOSFET |
|
| 6 | K2926 |
Hitachi Semiconductor |
2SK2926 |
|
| 7 | K2929 |
Hitachi Semiconductor |
2SK2929 |
|
| 8 | K2930 |
Hitachi Semiconductor |
2SK2930 |
|
| 9 | K2936 |
Hitachi Semiconductor |
2SK2936 |
|
| 10 | K2936 |
Renesas |
Silicon N Channel MOS FET |
|
Desde 2024. D4U Semiconductor.
|