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EMB07P03A |
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| Part Number | EMB07P03A |
| Manufacturer | Excelliance MOS |
| Title | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Features |
CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage
Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1
Forward Trans... |
| Document |
 EMB07P03A Data Sheet
PDF 189.71KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMB07P03CS |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | EMB07P03G |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 3 | EMB07P03V |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 4 | EMB07B03H |
Excelliance MOS |
Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 5 | EMB07N03A |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 6 | EMB07N03HR |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
Desde 2024. D4U Semiconductor.
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