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BUV52 |
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| Part Number | BUV52 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Current Capability ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 4A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP... |
| Features |
tor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.27A IC= 4A; IB= 0.27A; TC= 100℃
VCE (sat)-2
Collector-Emitter Saturation Voltage
IC= 8A; IB= 0.8A IC= 8A; IB= 0.8A; TC= 100℃
VCE (sat)-3
Collector-Emitter Saturation Voltage
IC= 12A; IB= 1.5A IC= 12A; IB= 1.5A; TC= 100℃
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 8A; IB= 0.8A IC= 8A; IB= 0.8A; TC= 100℃
... |
| Document |
 BUV52 Data Sheet
PDF 205.22KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUV50 |
INCHANGE |
NPN Transistor |
|
| 2 | BUV50 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | BUV50 |
Seme LAB |
Bipolar NPN Device |
|
| 4 | BUV51 |
Seme LAB |
Bipolar NPN Device |
|
| 5 | BUV51 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 6 | BUV52A |
Seme LAB |
FAST SWITCHING POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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