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NPN transistor Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed- |
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PNP Transistor and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation Smaller required Printed-Circuit |
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nexperia |
PNP Transistor Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for |
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5.1A NPN transistor Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for |
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2A PNP/PNP double transistor and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • Exposed heat sink for excellent therm |
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NPN/NPN transistor I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for |
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7A NPN transistor and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC 1.3 Applications Loadswitch Battery-driven devices Power management High energy |
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3A NPN transistor and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High efficiency due to less heat generation • High temperature applications up to 175 °C • |
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nexperia |
50V low VCEsat NPN transistor and benefits • Low collector-emitter saturation voltage • High collector current capability: IC and ICM • High collector current gain (hFE ) at high IC • Higher efficiency leading to less heat generation • Reduced PCB area requirements compared to DP |
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5.5A NPN transistor Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for |
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nexperia |
4.9A NPN transistor and benefits Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qu |
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nexperia |
PNP transistor and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC 1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High |
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nexperia |
NPN/NPN transistor and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board ( |
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nexperia |
PNP/PNP transistor I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for |
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nexperia |
PNP transistor and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements • AEC-Q101 qualified 3. Applications • Po |
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nexperia |
3A PNP low VCEsat transistor and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector current gain (hFE) at high IC • High energy efficiency due to less heat generation 3. Applications • DC/DC converters • S |
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nexperia |
NPN transistor and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • High energy efficiency due to less heat generation • Reduced Printed-Circuit Board (PCB) |
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nexperia |
NPN/NPN transistor and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High efficiency due to less heat gene |
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nexperia |
5.1A NPN transistor Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for |
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nexperia |
4.6A NPN transistor Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for |
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Desde 2024. D4U Semiconductor.
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