PBSM5240PF |
Part Number | PBSM5240PF |
Manufacturer | nexperia (https://www.nexperia.com/) |
Description | Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic p... |
Features |
Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Loadswitch Power management Power switches (e.g. motors, fans)
Battery-driven devices Charging circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
PNP low VCEsat (BISS) transistor
VCEO collector-emitter voltage
IC co... |
Document |
PBSM5240PF Data Sheet
PDF 1.34MB |
Similar Datasheet
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