| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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nELL |
N-Channel Power MOSFET RDS(ON) = 0.26Ω @ VGS = 10V Ultra low gate charge(40nC max.) Low reverse transfer capacitance (CRSS = 3pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (13N60 |
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Nell |
N-Channel Power MOSFET RDS(ON) = 0.45Ω @ VGS = 10V Ultra low gate charge(81nC max.) Low reverse transfer capacitance (C RSS = 11pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature G (Gate) S (Source) |
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nELL |
N-Channel Power MOSFET RDS(ON) = 0.26Ω @ VGS = 10V Ultra low gate charge(40nC max.) Low reverse transfer capacitance (CRSS = 3pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (13N60 |
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nELL |
N-Channel Power MOSFET RDS(ON) = 0.26Ω @ VGS = 10V Ultra low gate charge(40nC max.) Low reverse transfer capacitance (CRSS = 3pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (13N60 |
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Desde 2024. D4U Semiconductor.
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