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IRF13N50 |
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| Part Number | IRF13N50 |
| Manufacturer | Nell |
| Description | The Nell IRF13N50 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of opera... |
| Features |
RDS(ON) = 0.45Ω @ VGS = 10V Ultra low gate charge(81nC max.) Low reverse transfer capacitance (C RSS = 11pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature
G (Gate)
S (Source)
PRODUCT SUMMARY
ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 14 500 0.45 @ V GS = 10V 81
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL VDSS V DGR V GS ID I DM I AR E AR E AS dv/dt PD TJ T STG TL PARAMETER Drain to Source voltage(Note 1) Drain to Gate voltage Gate to Source voltage
Continuous Drain Current
TEST CONDITIONS T J... |
| Document |
 IRF13N50 Data Sheet
PDF 269.92KB |
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Desde 2024. D4U Semiconductor.
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