| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
ZHONGGUI ELECTRONICS |
NPN Transistor z High Breakdown Voltage z High Current and Power Capacity TO – 3P 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage |
|
|
|
|
ZHONGGUI ELECTRONICS |
NPN Transistor z High Breakdown Voltage z High Current and Power Capacity TO – 3P 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage |
|
Desde 2024. D4U Semiconductor.
|