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3DA5200A |
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| Part Number | 3DA5200A |
| Manufacturer | ZHONGGUI ELECTRONICS |
| Description | DONGGUAN ZHONGGUI ELECTRONICS CO., LTD TO-3P Plastic-Encapsulate Transistors 3DA5200A TRANSISTOR (NPN) FEATURES z High Breakdown Voltage z High Current and Power Capacity TO – 3P 1. BASE 2. COLLECTO... |
| Features |
z High Breakdown Voltage z High Current and Power Capacity
TO – 3P 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 200 200 5 15 3 42 150 -55~+150 Unit V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown... |
| Document |
 3DA5200A Data Sheet
PDF 119.48KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DA5200A |
TY Semiconductor |
TO-3P Plastic-Encapsulate Transistors |
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| 2 | 3DA5200B |
TY Semiconductor |
TO-3P Plastic-Encapsulate Transistors |
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| 3 | 3DA5200B |
JCET |
NPN Transistor |
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| 4 | 3DA5200C |
TY Semiconductor |
TO-3P Plastic-Encapsulate Transistors |
|
| 5 | 3DA5200C |
ZHONGGUI ELECTRONICS |
NPN Transistor |
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| 6 | 3DA5027 |
LZG |
SILICON NPN TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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