Wolfspeed PTF Hoja de datos

No.	parte #	Fabricante	Descripción
1	PTFC270101M	Wolfspeed	High Power RF LDMOS Field Effect Transistor • Unmatched input and output • Typical CW performance, 2170 MHz, 28 V - Output power @ P1dB = 10 W - Gain = 20 dB - Efficiency = 60% • Typical two-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR - Output power = 1.3 W avg - Gain = 21 dB - Efficie
2	PTFA220121M	Wolfspeed	High Power RF LDMOS Field Effect Transistor • Typical two-carrier WCDMA performance at 2140 MHz, 8 dB PAR - POUT = 33 dBm Avg - ACPR = –45.5 dBc • Typical two-carrier WCDMA performance at 877 MHz, 8 dB PAR - POUT = 33 dBm Avg - ACPR = –44.5 dBc • Typical CW performance, 2140 MHz, 28 V - POU
3	PTFA080551F	Wolfspeed	Thermally-Enhanced High Power RF LDMOS FETs
4	PTFC261402FC	Wolfspeed	Thermally-Enhanced High Power RF LDMOS FET include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC261402FC Package
5	PTFC210202FC	Wolfspeed	Thermally-Enhanced High Power RF LDMOS FET • Input matched • Typical CW performance, 2170 MHz, 28 V, combined outputs - Output power at P1dB = 28 W - Efficiency = 62% - Gain = 20.9 dB • Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power • Integrated ESD protection : Human Body Model,
6	PTFA080551E	Wolfspeed	Thermally-Enhanced High Power RF LDMOS FETs
7	PTFB201402FC	Wolfspeed	High Power RF LDMOS Field Effect Transistor • Broadband internal matching • Typical CW performance, 28 V, single side - Output power, P1dB = 70 W - Efficiency = 56% • Integrated ESD protection • Excellent thermal stability • Capable of handling 10:1 VSWR @ 28 V, 70 W (CW) output power, pe