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Weitron Technology |
NPN Silicon Planar Epitaxial Transistor , I C = 1mA) (VCE = 5V, I C = 10mA) (VCE = 5V, I C = 50mA) Symbol hFE1 hFE2 hFE3 VCE(sat) Min 80 80 50 - Typ 160 - Max 400 0.15 0.2 1 Unit - Collector-Emitter Saturation Voltages (IC = 10mA, IB = 1mA) (IC = 50mA, IB = 5mA) V V V Base-Emitter |
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Weitron Technology |
NPN Silicon Planar Epitaxial Transistor mA) 10mA) 50mA) 100mA) 40 50 45 40 - 4 300 375 750 750 6 - Collector-Emitter Saturation Voltages (IC = 20mA, I B = 2mA) (IC = 50mA, I B = 5mA) mV mV pF Base-Emitter Saturation Voltages (IC = 10mA, I B = 1mA) VBE(sat) Cob Output Capacitance ( |
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Weitron Technology |
PNP Silicon Planar High Current Transistor 100 -60 -6 Max Max -50 -50 -10 Unit V V V nA nA nA WEITRON http://www.weitron.com.tw 1/4 11-Jul-07 PZT159 ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain VC |
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Desde 2024. D4U Semiconductor.
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