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PZT5551 |
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| Part Number | PZT5551 |
| Manufacturer | Weitron Technology |
| Description | PZT5551 NPN Silicon Planar Epitaxial Transistor BASE 1 3 EMITTER COLLECTOR 2, 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 4 1 2 3 SOT-223 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Emit... |
| Features |
, I C = 1mA) (VCE = 5V, I C = 10mA) (VCE = 5V, I C = 50mA)
Symbol
hFE1 hFE2 hFE3 VCE(sat)
Min
80 80 50 -
Typ
160 -
Max
400 0.15 0.2 1
Unit
-
Collector-Emitter Saturation Voltages
(IC = 10mA, IB = 1mA) (IC = 50mA, IB = 5mA)
V V V
Base-Emitter Saturation Voltages
(IC = 10mA, IB = 1mA) (IC = 50mA, IB = 5mA)
VBE(sat)
DYNAMIC CHARACTERISTICS
Current-Gain
(VCE = 10V, IC = 10mA, f = 100MHz)
fT Cob
100 -
-
300 6
MHz pF
Output Capacitance
(VCB = 10V, IE = 0, f = 1MHz)
CLASSIFICATION OF hFE2
Rank Range A 80 - 200 N 100 - 250 C 160 - 400
WEITRON
http://www.weitron.com.tw
2 /4
05-Jul-0... |
| Document |
 PZT5551 Data Sheet
PDF 293.15KB |
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