No. | parte # | Fabricante | Descripción | Hoja de Datos |
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WS |
SILICON DIFFUSED POWER TRANSISTOR Base current peak value Total power dissipation Tmb 25 Storage temperature Junction temperature MIN MAX 1500 600 5 8 4 6 125 150 150 UNIT V V V A A A W et4U.com VCESM VCEO VEBO IC IB IBM Ptot Tstg Tj -55 ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES |
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LRC |
Zener Diodes |
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WAYON |
Power Transient Voltage Suppressor WSxxP4SMA(-B) Power Transient Voltage Suppressor 400 watts Peak Pulse Power (10/1000μs) Unidirectional and Bidirectional Protection Fast Response Time : Typically < 1ns Excellent Clamping Capability Glass Passivated Junction Built-in St |
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WAYON |
Power Transient Voltage Suppressor WSxxP4SMA(-B) Power Transient Voltage Suppressor 400 watts Peak Pulse Power (10/1000μs) Unidirectional and Bidirectional Protection Fast Response Time : Typically < 1ns Excellent Clamping Capability Glass Passivated Junction Built-in St |
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WAYON |
Power Transient Voltage Suppressor WSxxP4SMA(-B) Power Transient Voltage Suppressor 400 watts Peak Pulse Power (10/1000μs) Unidirectional and Bidirectional Protection Fast Response Time : Typically < 1ns Excellent Clamping Capability Glass Passivated Junction Built-in St |
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WAYON |
Power Transient Voltage Suppressor 600 watts Peak Pulse Power (10/1000 μs) Unidirectional and Bidirectional Protection Fast Response Time : Typically < 1ns Excellent Clamping Capability Glass Passivated Junction Built-in Strain relief Low inductance Low profile packag |
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WAYON |
Power Transient Voltage Suppressor 600 watts Peak Pulse Power (10/1000 μs) Unidirectional and Bidirectional Protection Fast Response Time : Typically < 1ns Excellent Clamping Capability Glass Passivated Junction Built-in Strain relief Low inductance Low profile packag |
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DENSEI-LAMBDA |
Single output 15W ~ 450W |
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DENSEI-LAMBDA |
Single output 15W ~ 450W |
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DENSEI-LAMBDA |
Single output 15W ~ 450W |
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DENSEI-LAMBDA |
Single output 15W ~ 450W |
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DENSEI-LAMBDA |
Single output 15W ~ 450W |
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WS |
SILICON DIFFUSED POWER TRANSISTOR alue Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V MIN Tmb 25 -55 MAX 1500 600 5 8 4 6 125 150 150 UNIT V V V A A A W ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES VCEOsust VCEsat VBEsat hFE VF fT Cc ts tf |
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Sharma Electro Components |
Sharma Potentiometers ■ Hot-Molded / Industrial / Sealed ■ Locking-Bushing / Standard-Bushing ■ Meet MIL-R-94 Electrical Characteristics Standard Resistance Range……….. A: 100 to 4M7 ohms …………… B/C: 1K to 1M ohms Resistance Tolerance………….……… ±5%,±10%,±20% Absolute Minimum |
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Murata |
PTC Thermistors • Electric insulation on lead wire • Excellent bending resistance and easy handling due to suitable hardness of surface coating • High-accuracy of ±1% of resistance and B-Constant tolerance are realized due to uniform thickness by the precise shee |
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WAYON |
Power Transient Voltage Suppressor WSxxP4SMA(-B) Power Transient Voltage Suppressor 400 watts Peak Pulse Power (10/1000μs) Unidirectional and Bidirectional Protection Fast Response Time : Typically < 1ns Excellent Clamping Capability Glass Passivated Junction Built-in St |
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Vishay |
(GWS Series) Vitreous Wirewound Resistors • www.datasheet4u.com Complete welded construction Ceramic core High quality vitreous coating Available in adjustable or non-inductive design • • • • Lugs with various termination styles suitable for soldering or bolt connection • TC 100. . .180pp |
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Vishay |
Cemented Wirewound Resistors with Lugs Complete welded construction Ceramic core Available in adjustable = “E” or non inductive design = “Ni” Lugs with various termination soldering or bolt connection styles for Compliant to RoHS Directive 2002/95/EC STANDARD ELECTRICAL SPECIF |
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Infineon |
IGBT Reverse conducting IGBT with monolithic body diode designed for soft commutation Integrated Driver with o over-voltage and over-current protection o Active clamp control circuit o Programmable over-voltage threshold o Programmable cycle-by-cycle |
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