S2055AF |
Part Number | S2055AF |
Manufacturer | WS |
Description | SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode , primarily for use in horizontal deflection circuites of co... |
Features |
alue Total power dissipation Storage temperature Junction temperature
CONDITIONS VBE = 0V
MIN
Tmb 25 -55
MAX 1500 600 5 8 4 6 125 150 150
UNIT V V V A A A W
ELECTRICAL CHARACTERISTICS
SYMBOL
ICE ICES VCEOsust VCEsat VBEsat hFE VF fT Cc ts tf
PARAMETER Collector-emitter cut-off current
Collector-emitter sustaining voltage Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 1MHz Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit) Turn-off storage time Turn-off fall time
CONDIT... |
Document |
S2055AF Data Sheet
PDF 100.46KB |
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