| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
WEJ |
DIODE TPower dissipation .,LPD: 200 mW (Tamb=25℃) Collector current IO: 250 mA OCollector-base voltage VR: 75 V COperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. 30¡ À0. 03 SOT-323 1. 25¡ À0. 05 2. 30¡ À0. 05 Unit: mm 0. 30 2. |
|
|
|
|
WEJ |
TRANSISTOR r Saturation Voltage ECollector-Emitter Saturation Voltage WBase-Emitter Saturation Voltage (Ta=25 oC) Symbol MIN. TYP. MAX. Unit Condition BVCEO BVCBO BVEBO ICEO IEBO hFE1 hFE2 hFE3 hFE4 hFE5 VCE(sat) VCE(sat) VBE(sat) -40 -40 -5 60 80 100 60 3 |
|
|
|
|
WEJ |
TRANSISTOR DPower dissipation PCM : 0.3 W (Tamb=25OC) TCollector current .,LICM : -0.6A Collector-base Voltage V(BR)CBO :-160V OOperating and storage junction temperature range CTj, Tstg : -55OC to +150OC 2.9 1.9 0.95 0.95 0.4 1 1. 2.4 1.3 SOT-23 3 2 1.BASE |
|
|
|
|
WEJ |
NPN EPITAXIAL SILICON TRANSISTOR |
|
|
|
|
WEJ |
MONOL LTHIC DUAL SWITCHING DIODE 10% t IF D50 INPUT TPULSE .,LGEMERATOR DUT 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR IR;RECI=10nA OUTPUT FULSE (IF=lR=10mA;MEASURED at iR(REC)=10mA) Notes.1.A 2.0K Variable resistor resistor adjusted for a Forward Current(lF) of |
|
|
|
|
WEJ |
MONOL LTHIC DUAL SWITCHING DIODE MONOL LTHIC DUAL SWITCHING DIODE MMBD2837LT1 MMBD2837LT1 D+10V 820 2.0K 100 H IF 0.1 F tP 10% t IF T50 INPUT .,LPULSE GEMERATOR DUT 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR IR;RECI=10nA OUTPUT FULSE (IF=lR=10mA;MEASURED at iR( |
|
|
|
|
WEJ |
MONOLITHIC DUAL SWITCHING DIODE |
|
|
|
|
WEJ |
NPN Transistor 1. BASE Power dissipation PCM: 0.15 W (Tamb=25℃) DCollector current ICM: 0.6 A TCollector-base voltage V(BR)CBO: 75 V .,LOperating and storage junction temperature range 2. EMITTER 3. COLLECTOR TJ, Tstg: -55℃ to +150℃ OELECTRICAL CHARACT |
|
|
|
|
WEJ |
TRANSISTOR oltage BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VCE(sat) VBE(sat) VBE(sat) 180 160 6 80 80 30 50 50 250 0.5 0.15 1 1 V IC=100 A IE=0 V IC=1mA IB=0 V IE=10 A IC=0 nA VCB=120V, VC=0 nA VCB=4V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=-10mA VCE=5V, |
|
Desde 2024. D4U Semiconductor.
|