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MMBD4448W |
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| Part Number | MMBD4448W |
| Manufacturer | WEJ |
| Description | RoHS MMBD4448W MMBD4448W SWITCHING DIODE DFEATURES TPower dissipation .,LPD: 200 mW (Tamb=25℃) Collector current IO: 250 mA OCollector-base voltage VR: 75 V COperating and storage junction temperatur... |
| Features |
TPower dissipation
.,LPD: 200 mW (Tamb=25℃)
Collector current
IO: 250 mA
OCollector-base voltage VR: 75 V
COperating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
1. 30¡ À0. 03
SOT-323
1. 25¡ À0. 05 2. 30¡ À0. 05
Unit: mm
0. 30 2. 00¡ À0. 05
1. 01 REF
NICMarking: KA3
TROELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
CParameter EReverse breakdown voltage LReverse voltage leakage current EForward voltage EJDiode capacitance WReverse recovery time
Symbol V(BR) R
IR
VF
CD t rr
Test conditions
IR= 10µA
VR=20V VR=75V IF=5mA IF=10mA IF=100mA IF=150mA VR=0V,... |
| Document |
 MMBD4448W Data Sheet
PDF 129.67KB |
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Desde 2024. D4U Semiconductor.
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