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WEJ |
2SC536 Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 400 mW (Tamb=25℃) 2. COLLECTOR 3. BASE 1 2 3 Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ E |
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WEJ |
NPN EPITAXIAL SILICON TRANSISTOR V nA nA V PF MHz IC=100 A IE=0 IC=1mA IB=0 IE=100 A IC=0 VCB=12V, VE=0 VCB=3V, IC=0 VCB=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=10,f=1MHz VCE=5V, IC=5mA *Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25oC # Pulse Test: Pulse Width 300uS |
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WEJ |
NPN Transistor Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 400 mW (Tamb=25℃) 2. COLLECTOR 3. BASE 1 2 3 Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ E |
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WEJ |
NPN Transistor Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BASE ELECTRICAL CHARACTERISTICS (Tamb=25 |
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WEJ |
TRANSISTOR Power dissipation PCM: TRANSISTOR (NPN) TO-126C 1.25 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICA |
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WEJ |
NPN Transistor |
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WEJ |
NPN Transistor Power dissipation TRANSISTOR (NPN) TO—92 PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. EMITTER ELECTRICAL CHARACTERI |
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WEJ |
NPN Transistor Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: 1.2 A Collector-base voltage OV(BR)CBO: 30 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELEC |
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WEJ |
NPN Transistor nA nA V PF MHz IC=100 A IE=0 IC=1mA IB=0 IE=100 A IC=0 VCB=12V, VE=0 VCB=3V, IC=0 VCB=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=10,f=1MHz VCE=5V, IC=5mA *Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25oC # Pulse Test: Pulse Width 300uS Du |
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WEJ |
NPN Transistor Voltage Vce(sat) 0.3 Base-Emitter Saturation Voltage Vbe(sat) 1.00 LBase-Emitter on Voltage Vbe(on) 0.58 0.63 o.7 Output Capacitance Cob 2.2 3.5 ECurrent Gain-Bandwidth Product fT 150 270 Noise Figure NF 10 J* Total Device Dissipation : |
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WEJ |
NPN EPITAXIAL SILICON TRANSISTOR 15 V IC=1mA IB=0 5 V IE=100 A IC=0 50 nA VCB=12V, VE=0 50 nA VCB=3V, IC=0 28 100 300 VCB=5V, IC=1mA 0.5 V IC=10mA, IB=1mA 1.3 1.7 PF VCB=10V, IE=10,f=1MHz 700 1100 MHz VCE=5V, IC=5mA W*Total Device Dissipation:FR=1X0.75X0.062 in Board Derat |
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WEJ |
NPN Transistor ector-Emitter Saturation Voltage Vce(sat) 0.40 V Ic= 10mA Ib= 1mA CCollector-Base Capacitance Cob 1.3 1.7 PF Vcb=10V Ie=0 f=1MHZ ECurrent Gain-Bandwidth Product fT 550 MHz Vce= 6V Ic= 1mA L* Total Device Dissipation : FR=1X0.75X0.062in Board,D |
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WEJ |
NPN Transistor Power dissipation PCM: TRANSISTOR (NPN) TO-92MOD 1. EMITTER 2. COLLECTOR 0.8 W (Tamb=25℃) 3. BASE Collector current 0.1 A ICM: Collector-base voltage V(BR)CBO: 200 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELE |
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Desde 2024. D4U Semiconductor.
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