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Weitron Technology |
NPN Silicon Planar Epitaxial Transistor , I C = 1mA) (VCE = 5V, I C = 10mA) (VCE = 5V, I C = 50mA) Symbol hFE1 hFE2 hFE3 VCE(sat) Min 80 80 50 - Typ 160 - Max 400 0.15 0.2 1 Unit - Collector-Emitter Saturation Voltages (IC = 10mA, IB = 1mA) (IC = 50mA, IB = 5mA) V V V Base-Emitter |
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Weitron Technology |
NPN Silicon Planar Epitaxial Transistor mA) 10mA) 50mA) 100mA) 40 50 45 40 - 4 300 375 750 750 6 - Collector-Emitter Saturation Voltages (IC = 20mA, I B = 2mA) (IC = 50mA, I B = 5mA) mV mV pF Base-Emitter Saturation Voltages (IC = 10mA, I B = 1mA) VBE(sat) Cob Output Capacitance ( |
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Weitron Technology |
PNP Silicon Planar High Current Transistor 100 -60 -6 Max Max -50 -50 -10 Unit V V V nA nA nA WEITRON http://www.weitron.com.tw 1/4 11-Jul-07 PZT159 ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain VC |
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Weitron |
High-Voltage PNP Transistor Surface Mount cal Characteristics (TA=25˚C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit On Characteristics1 DC Current Gain (IC= -1.0 mAdc, VCE=-10Vdc) (IC= -10 mAdc, VCE= -10Vdc) (IC= -50 mAdc, VCE= -10Vdc) (IC= -100 mAdc, VCE= -10Vdc |
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WEITRON |
NPN Silicon Planar Epitaxial Transistor TE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575 inches 0.059 inches; mounting pad for the collector lead min. 0.93 inches.2 WEITRON http://www.weitron.com.tw PZT2222A ELECTRICALCHARACTERISTICS-Continued (T A = 25 C unless |
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WEITRON |
High-Voltage PNP Transistor Vdc Vdc Vdc Adc Adc WEITRON http://www.weitron.com.tw 1/4 23-Sep-05 PZTA92 Electrical Characteristics (TA=25˚C unless otherwise noted) (Countinued) Characteristics Symbol On Characteristics DC Current Gain (IC= -1.0 mAdc, VCE= -10Vdc) (IC= - |
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WEITRON |
NPN Silicon Planar Epitaxial Transistor CE = 10V,IC = 30mA) Collector-Emitter Saturation Voltages (IC = 20mA, IB = 2mA) Base-Emitter Saturation Voltages (IC = 20mA, IB = 2mA) DYNAMIC CHARACTERISTICS Current-Gain—Bandwidth Product (VCE = 20V, IC = 10mA, f = 100MHz) Output Capacitance (VCB = |
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WEITRON |
Darlington NPN Silicon Planar Epitaxial Transistor |
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WEITRON |
PNP Silicon Planar Epitaxial Transistor ICEX - -50 nAdc IEBO - 100 nAdc NOTE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575 inches 0.059 inches; mounting pad for the collector lead min. 0.93 inches.2 WEITRON http://www.weitron.com.tw 1/4 Rev.A 26-Aug-05 PZT290 |
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Desde 2024. D4U Semiconductor.
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