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Vishay Siliconix |
Dual P-Channel 20-V (D-S) MOSFET hysical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same numbe |
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Vishay Siliconix |
P-Channel MOSFET t ≤ 5 sec Steady State Steady State Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C/ C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead t |
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Vishay Siliconix |
Complementary MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Ultra Low RDS(on) and Excellent Power Handling In Compact Footprint • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching for Portable Devices 1206-8 |
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Vishay Siliconix |
N-Channel 30-V (D-S) MOSFET sec Steady State Steady State Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C/W C/ Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead termina |
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Vishay Siliconix |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 • TrenchFET® Power MOSFET APPLICATIONS • Load Switches - Notebook PC 1206-8 ChipFET ® 1 D D D D S D D G D G Bottom View S N-Channel MOSFET Ordering Information: Si5440DC-T1-GE3 (Lead (Pb)-free and Hal |
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Vishay Siliconix |
N-Channel MOSFET tate Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not pla |
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Vishay Siliconix |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs: 2.5 V Rated • Low Thermal Resistance 1206-8 ChipFET® 1 APPLICATIONS • Load/Power Switching for Cell Phones and Pagers • PA Switch in Cellular Devices • Battery Oper |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs: 2.5 V Rated 1206-8 ChipFET® 1 D D D D D D S G Bottom View Marking Code BB XX Lot Traceability and Date Code Part # Code Ordering Information: Si5443DC-T1-E3 |
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Vishay Siliconix |
P-Channel MOSFET Steady State Steady State Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C/ C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 1.8 V Rated • Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET ® 1 D D D D D DG S 1.8 mm Marking Code BF XX Lot Traceability and Date Code Part # Code 3. |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Ultra Low Vf Schottky • Si5853DC Pin Compatible • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Charging Circuit in Portable Devices 1206-8 ChipFET® 1 A KA |
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Vishay Siliconix |
Dual P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET® 1 S1 D1 G1 D1 S2 D2 D2 G2 Marking Code DA XX Lot Traceability and Date Code Bottom View Part # Code |
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Vishay Siliconix |
Dual P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • Compliant to RoHS Directive 2002/95/EC S1 S2 G1 G2 Bottom View Ordering Information: Si5933DC-T1-E3 (Lead (Pb)-free) Si5933DC-T1-GE3 (Lead (Pb)-free and |
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Vishay Siliconix |
Dual P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Low RDS(on) Dual and Excellent Power Handling in a Compact Footprint • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • Battery Switch |
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Vishay Siliconix |
Dual P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • Compliant to RoHS Directive 2002/95/EC S1 S2 G1 G2 Bottom View Ordering Information: Si5975DC-T1-E3 (Lead (Pb)-free) Si5975DC-T1-GE3 (Lead (Pb)-free and |
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Vishay Siliconix |
N-/P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Complementary MOSFET for Portable Devices - Ideal for Buck-Boost Circuits 1 S1 D1 D1 G1 S2 D2 G2 D2 D1 M |
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Vishay Siliconix |
Dual P-Channel 8-V (D-S) MOSFET ysical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number |
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Vishay Siliconix |
P-Channel 20-V (D-S) MOSFET ID (A) −7.1 −6.4 −5.5 16.5 Qg (Typ) D D D D TrenchFETr Power MOSFET Ultra-Low On-Resistance Thermally Enhanced ChipFETr Package 40% Smaller Footprint Than TSOP-6 APPLICATIONS D Load Switch, PA Switch, and Battery Switch for Portable Devices www. |
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Vishay Siliconix |
Dual N-Channel 1.5-V (G-S) MOSFET • TrenchFET® Power MOSFET: 1.5 V Rated • Ultra -low on-resistance in compact, thermally enhanced ChipFET® package RoHS COMPLIANT APPLICATIONS • Load switch for portable applications - Guaranteed operation at VGS = 1.5 V critical for opti mized desi |
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Vishay Siliconix |
P-Channel MOSFET ID (A) −7.1 −6.2 −5.3 14 Qg (Typ) D TrenchFETr Power MOSFET 1206-8 ChipFETr 1 D D D D S D D G S G Marking Code BM XX Lot Traceability and Date Code Part # Code Bottom View D P-Channel MOSFET Ordering Information: Si5445BDC-T1—E3 ABSOLUTE MAX |
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Desde 2024. D4U Semiconductor.
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