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SI5402DC Vishay Siliconix N-Channel 30-V (D-S) MOSFET Datasheet

SI5402DC-T1-GE3 N채널 30V 4.9A(Ta) 1.3W(Ta) 표면 실장 1206-8 ChipFET™


Vishay Siliconix
SI5402DC
Part Number SI5402DC
Manufacturer Vishay (https://www.vishay.com/) Siliconix
Description Si5402DC Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.035 @ VGS = 10 V 0.055 @ VGS = 4.5 V ID (A) 6.7 5.3 www.DataSheet4U.com 1206-8 ChipFETt 1 D D D D S D D G D G Marking Code AA XX Lot Traceability and Date Code Bottom View Part # Code S N-Chann...
Features sec Steady State Steady State Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C/W C/ Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: ...

Document Datasheet SI5402DC datasheet pdf (94.36KB)
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SI5402DC Distributor

part
Vishay Siliconix
SI5402DC-T1-GE3
N채널 30V 4.9A(Ta) 1.3W(Ta) 표면 실장 1206-8 ChipFET™
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DigiKey

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Vishay Intertechnologies
SI5402DC-T3
MOSFET 30V 6.7A 2.5W 35mohm @ 10V
10000 units: 0.487 USD
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Mouser Electronics

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Vishay Intertechnologies
SI5402DC-T1
4900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
1525 units: 0.462 USD
341 units: 0.525 USD
1 units: 1.26 USD
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Quest Components

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Vishay Intertechnologies
SI5402DC-T1-E3
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SI5402DC Similar Datasheet

Part Number Description
SI5402BDC
manufacturer
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
Package: Pin Out: N-Channel, 30-V (D-S) MOSFET 1206-8 ChipFET® Identical Part Number Replacements: Si5402BDC-T1-E3 Replaces Si5402DC-T1-E3 Si5402BDC-T1-E3 Replaces Si5402DC-T1 www.DataSheet4U.com Summary of Performance: The Si5402BDC is the replacement to the original Si5402DC; both parts perform identically, including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Si5402BDC Si5402DC Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25°C TA = 70°C Operating Junction & Storage Temperature Range Maximum Junc...




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