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Vishay Siliconix |
P-Channel MOSFET www.vishay.com/www/product/spice.htm Document Number: 70627 S-31990—Rev. E, 13-Oct-03 www.vishay.com RthJA Symbol Limit 100 166 Unit _C/W 1 Si2301DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain |
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Vishay Siliconix |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G1 S2 3D Top View Si2302ADS (2A)* * Marking Code Ordering Information: Si2302ADS-T1-E3 (Lead (Pb)-free) Si2302ADS-T1- |
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Vishay Siliconix |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested TO-236 (SOT-23) G1 S2 3D Top View Si2308DS (A8)* * Marking Code Ordering Information: Si2308DS-T1 Si2308DS-T1-E3 (Lead (Pb)-free) Si2308DS-T1-GE3 (Le |
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Vishay Siliconix |
N-Channel MOSFET D 1.8-V Rated D RoHS Compliant Top View Si2312DS (C2)* *Marking Code Ordering Information: Si2312DS-T1 Si2312DS-T1—E3 (Lead (Pb)-Free) Pb-free Available ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady |
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Vishay Siliconix |
P-Channel MOSFET • TrenchFET® power MOSFET • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Marking code: E7 1 G Top View 2 S S G Available PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at V |
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Vishay Siliconix |
P-Channel MOSFET el information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72066 S-31990—Rev. B, 13-Oct-03 www.vishay.com RthJA Symbol Typical 120 140 Maximum 145 175 Unit _C/W 1 Si2301BDS Vishay Siliconix SPECIFICATIONS |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC G1 S2 3D Top View Si2301 BDS (L1)* * Marking Code Ordering Information: Si2301BDS-T1-E3 (Lead (Pb)-free) Si2 |
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Vishay Siliconix |
N-Channel MOSFET ID (A) 3.5 2.8 rDS(on) (W) 0.057 @ VGS = 10 V 0.094 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 D S 2 Top View Si2306DS (A6)* *Marking Code Ordering Information: Si2306DS-T1 ABSOLUTE MAXIMUM RATINGS (TA |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch • PA Switch TO-236 (SOT-23) G1 S2 3D Top View Si2323DS (D3)* * Marking Code Ordering Information: Si2323DS-T1 Si2323DS-T1-E3 (Lead (Pb)-free |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free Option Available • TrenchFET® Power MOSFETS APPLICATIONS • Load Switch • PA Switch Top View Si2331DS *(E1) * Marking Code Ordering Information: Si2331DS-T1-E3 (Lead (Pb)-free) Si2331DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUT |
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Vishay Siliconix |
P-Channel MOSFET ID (A) - 4.1 - 3.4 - 2.0 7.8 nC Qg (Typ.) PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.040 at VGS = - 4.5 V -8 0.060 at VGS = - 2.5 V 0.088 at VGS = - 1.8 V • Halogen-free Option Available • TrenchFET® Power MOSFET • 100 % Rg Tested RoHS COMPLIANT APPL |
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Vishay Siliconix |
P-Channel MOSFET al interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for |
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Vishay Siliconix |
P-Channel 40-V (D-S) MOSFET D TrenchFETr Power MOSFET ID (A)b rDS(on) (W) 0.082 @ VGS = −10 V 0.130 @ VGS = −4.5 V APPLICATIONS D Load Switch −3.0 −2.4 TO-236 (SOT-23) G 1 3 D Ordering Information: Si2319DS-T1 Si2319DS-T1—E3 (Lead Free) S 2 Top View Si2319DS (C9)* *Mar |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G1 S2 3D Top View Si2303BDS (L3)* * Marking Code Ordering Information: Si2303BDS-T1 Si2303BDS-T1-E3 (Lead (Pb)-free) Si2303BDS-T1-GE3 (Lead (Pb)-free and Halogen-f |
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Vishay Siliconix |
P-Channel MOSFET rature. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70770 S-49557—Rev. B, 27-Apr-98 Typical 100 166 Unit _C/W www.vishay.com S FaxBack 408-970-5600 2-1 Si2303DS Vishay Siliconix |
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Vishay Siliconix |
P-Channel MOSFET ishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = –10 mA VDS = |
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Vishay Siliconix |
P-Channel MOSFET C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-Resistance Drain-Source On Resistancea Forward Transcond |
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Vishay Siliconix |
P-Channel MOSFET nix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transcond |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch RoHS COMPLIANT TO-236 (SOT-23) G1 S2 3D Top View Si2311DS (C1)* * Marking Code Ordering Information: Si2311DS-T1-E3 (Lead (Pb)-free) Si2311DS-T1-GE3 (Lead (Pb)- |
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Vishay Siliconix |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • ESD Protected: 3000 V APPLICATIONS • LI-lon Battery Protection D G1 S2 3D Top View Si2314EDS (C4)* *Marking Code Ordering Information: Si2314EDS-T1-E3 (Lead (Pb)-free |
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Desde 2024. D4U Semiconductor.
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