| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Vishay |
1200V N-Channel SiC MOSFET • Fast switching speed • Short circuit withstand time 3 μs • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Charger • Industrial UPS • Boost inverter • DC/DC converter O |
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Vishay Telefunken |
Photo Modules for PCM Remote Control Systems D Photo detector and preamplifier in one package D Internal filter for PCM frequency D Improved shielding against electrical field D D D D disturbance TTL and CMOS compatibility Output active low Low power consumption High immunity against ambient li |
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Vishay |
Thick Film Chip Resistors • Thick film resistive element on an aluminum nitride (AlN) substrates Available • Very high thermal conductivity in a small package size • Termination: tin / lead wraparound termination over nickel barrier. Also available with lead (Pb)-free wra |
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Vishay Siliconix |
Metalized Polyester Film Capacitors Wrap-and-Fill • Economical • Extensive standard ratings • Rugged construction • Small size PERFORMANCE CHARACTERISTICS Operating Temperature: - 55°C to + 85°C. Capacitance Range: 0.0047µF to 10.0µF. Capacitance Tolerance: ± 20%, ± 10%, ± 5%. DC Voltage Rating: 50 |
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Vishay Telefunken |
Photo Modules for PCM Remote Control Systems D Photo detector and preamplifier in one package D Internal filter for PCM frequency D Improved shielding against electrical field disturbance Special Features D Enhanced immunity against all kinds of disturbance light D No occurrence of disturbanc |
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Vishay Telefunken |
Photo Modules for PCM Remote Control Systems D Photo detector and preamplifier in one package D Internal filter for PCM frequency D Improved shielding against electrical field D D D D disturbance TTL and CMOS compatibility Output active low Low power consumption High immunity against ambient li |
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Vishay |
Trench MOS Barrier Schottky Rectifier • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
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Vishay |
Molding Type Module IGBT • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Rugged with ultrafast performance • Square RBSOA • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct |
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Vishay |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
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Vishay |
Trench MOS Barrier Schottky Rectifier • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
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Vishay |
IR Receiver • Individual IC settings to reach maximum performance • Immunity against noise (lamps, LCD TV, Wi-Fi) • Low supply current • Photo detector and preamplifier in one package • Supply voltage: 2.0 V to 5.5 V • Material categorization: for definitions of |
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Vishay |
IR Receiver • Individual IC settings to reach maximum performance • Immunity against noise (lamps, LCD TV, Wi-Fi) • Low supply current • Photo detector and preamplifier in one package • Supply voltage: 2.0 V to 5.5 V • Material categorization: for definitions of |
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Vishay |
IR Receiver • Individual IC settings to reach maximum performance • Immunity against noise (lamps, LCD TV, Wi-Fi) • Low supply current • Photo detector and preamplifier in one package • Supply voltage: 2.0 V to 5.5 V • Material categorization: for definitions of |
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Vishay |
1200 V N-Channel SiC MOSFET • Fast switching speed • Short circuit withstand time 3 μs • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Charger • Boost inverter • DC/DC converter PRODUCT SUMMARY VDS (V) at TJ max. |
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Vishay |
Transient Voltage Suppressors • P600 glass passivated chip junction • Available in uni-directional polarity only • 5000 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low i |
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Vishay Siliconix |
Metalized Polyester Film Capacitors Wrap-and-Fill • Economical • Extensive standard ratings • Rugged construction • Small size PERFORMANCE CHARACTERISTICS Operating Temperature: - 55°C to + 85°C. Capacitance Range: 0.0047µF to 10.0µF. Capacitance Tolerance: ± 20%, ± 10%, ± 5%. DC Voltage Rating: 50 |
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Vishay Siliconix |
Metalized Polyester Film Capacitors Wrap-and-Fill • Economical • Extensive standard ratings • Rugged construction • Small size PERFORMANCE CHARACTERISTICS Operating Temperature: - 55°C to + 85°C. Capacitance Range: 0.0047µF to 10.0µF. Capacitance Tolerance: ± 20%, ± 10%, ± 5%. DC Voltage Rating: 50 |
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Vishay Siliconix |
Metalized Polyester Film Capacitors Wrap-and-Fill • Economical • Extensive standard ratings • Rugged construction • Small size PERFORMANCE CHARACTERISTICS Operating Temperature: - 55°C to + 85°C. Capacitance Range: 0.0047µF to 10.0µF. Capacitance Tolerance: ± 20%, ± 10%, ± 5%. DC Voltage Rating: 50 |
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Vishay Siliconix |
Metalized Polyester Film Capacitors Wrap-and-Fill • Economical • Extensive standard ratings • Rugged construction • Small size PERFORMANCE CHARACTERISTICS Operating Temperature: - 55°C to + 85°C. Capacitance Range: 0.0047µF to 10.0µF. Capacitance Tolerance: ± 20%, ± 10%, ± 5%. DC Voltage Rating: 50 |
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Vishay Siliconix |
Metalized Polyester Film Capacitors Wrap-and-Fill • Economical • Extensive standard ratings • Rugged construction • Small size PERFORMANCE CHARACTERISTICS Operating Temperature: - 55°C to + 85°C. Capacitance Range: 0.0047µF to 10.0µF. Capacitance Tolerance: ± 20%, ± 10%, ± 5%. DC Voltage Rating: 50 |
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Desde 2024. D4U Semiconductor.
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