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V8P12 |
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| Part Number | V8P12 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com V8P12 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 4 A TMBS® eSMP® Series K 1 2 TO-277A (SMPC... |
| Features |
• Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 8.0 A TJ max. Package 8.0 A 120 V 140 A 100 mJ 0.63 V 150 °C TO-277A (SMPC) Diode variations Single die TYPI... |
| Document |
 V8P12 Data Sheet
PDF 101.97KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | V8P10 |
Vishay |
Trench MOS Barrier Schottky Rectifier |
|
| 2 | V8P15 |
Vishay |
Trench MOS Barrier Schottky Rectifier |
|
| 3 | V8P20 |
Vishay |
Trench MOS Barrier Schottky Rectifier |
|
| 4 | V8P45 |
Vishay |
Trench MOS Barrier Schottky Rectifier |
|
| 5 | V8P6 |
Vishay |
Trench MOS Barrier Schottky Rectifier |
|
| 6 | V8P8 |
Vishay |
Trench MOS Barrier Schottky Rectifier |
|
Desde 2024. D4U Semiconductor.
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