Vishay AN6 Hoja de datos

No.	parte #	Fabricante	Descripción
1	AN605	Vishay	Power MOSFET ed. This application note details the basic structure of the Trench MOSFET structure, identifying the parasitic components and defining related terminology. It also describes how and why the parasitic parameters occur. With a large variety of topolog
2	AN602	Vishay Siliconix	Driver ICs V), which exceed ISO 9141 ( –1 V to 40 V). The Drivers The Si9241AEY (Figure 2) is designed for the user that needs only K-Line communication. The ECU controls the K output through Transmit Pin (Tx) and Chip Select Bar (CS). The fault detection circu
3	AN606	Vishay	Current Sensing Power MOSFETs such as overcurrent and/or short circuit. This approach offers the freedom and flexibility of control-circuit design, though the accuracy of measurement is not suitable for current-control applications. Virtually any power MOSFET from the Vishay Sili
4	AN601	Vishay Siliconix	Unclamped Inductive Switching Rugged MOSFETs s article. IO L the peak current reached during avalanche tAV the time duration of the avalanche phenomenon the value of inductance the breakdown voltage in avalanche V(BR)eff What is Unclamped Inductive Switching? This application note reviews the
5	AN603	Vishay Siliconix	Designing With the Si9978DW Configurable H-Bridge Controller integral high-side drive circuitry and an internal voltage regulator, which allows operation over a 20to 40-V dc input voltage range. Protection features include cross-conduction protection, current limiting, and undervoltage lockout. The FAULT outpu