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AN605 |
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| Part Number | AN605 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | Base resistance TABLE 1 Symbol RB Rg Gate resistance internal to the MOSFET Cgs Capacitance due to the overlap of the source and channel regions by the polysilicon gate. Independent of applied vo... |
| Features |
ed. This application note details the basic structure of the Trench MOSFET structure, identifying the parasitic components and defining related terminology. It also describes how and why the parasitic parameters occur. With a large variety of topologies, switching speeds, load currents, and output voltages available, it has become impossible to identify a generic MOSFET that offers the best performance across the wide range of circuit conditions. In some circumstances the on-resistance (rDS(on)) losses dominate, and in others it is the switching losses of the transient current and voltage wave... |
| Document |
 AN605 Data Sheet
PDF 116.53KB |
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