| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Vishay Siliconix |
Schottky Rectifier Base cathode 2 • • • • • • 3 Anode 1 D2PAK N/C 125 °C TJ operation (VR < 5 V) Center tap module Optimized for OR-ing applications Ultra low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliabilit |
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Vishay |
Phase Control Thyristors • Center amplifying gate • Metal case with ceramic insulator • International standard case TO-200AC (B-PUK) • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO |
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Vishay |
Power MOSFET I2PAK (TO-262) D2PAK (TO-263) DESCRIPTION G G D S G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHFBC20S-GE3 IRFBC20SPbF SiHFBC20S-E3 D2PAK ( |
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Vishay |
Photovoltaic Solar Cell Protection Schottky Rectifier • Trench MOS Schottky technology Photovoltaic Solar Cell Protection Schottky Rectifier TMBS ® • Low forward voltage drop, low power losses • High efficiency operation • High forward surge capability • ESD capability P600 • Solder dip 275 °C max |
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Vishay |
Power MOSFET • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching • Ease of paralleling • Simple drive requirements Available • Material categorization: for definitions of compliance |
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Vishay |
Power MOSFET • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching • Ease of paralleling • Simple drive requirements Available • Material categorization: for definitions of compliance |
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Vishay |
Power MOSFET • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS (on) Specified at VGS = 4 V and 5 V • 175°C Operating Temperature • Compliant to RoHS Directive 2002/95/EC DESCRI |
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Vishay |
Linear Position Sensor • Accurate linearity down to: ± 1 % • Electrical strokes from 0 mm to 10 mm • Long life: Greater than 10M cycles • Non contacting technology: Hall effect • Model dedicated to all applications in harsh environments • Material categorization: for defin |
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Vishay |
Phase Control Thyristors • Center amplifying gate • Metal case with ceramic insulator • International standard case TO-200AC (B-PUK) • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO |
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Vishay |
Schottky Rectifier • 125 °C TJ operation (VR < 5 V) • Single diode configuration • Optimized for OR-ing applications • Ultra low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • High purity, high temperature epoxy encapsulation for |
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Vishay |
P-Channel 200-V (D-S) MOSFETs D High-Side Switching D Secondary Breakdown Free: –220 V D Low On-Resistance: 11.5 W D Low-Power/Voltage Driven D Excellent Thermal Stability BENEFITS D Ease in Driving Switches D Full-Voltage Operation D Low Offset Voltage D Easily Driven Without B |
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Vishay |
Phase Control Thyristors • Center amplifying gate • Metal case with ceramic insulator • International standard case B-PUK (TO-200AC) • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 B- |
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Vishay Siliconix |
N-Channel MOSFET D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized With Low Threshold APPLICATIONS D Primary Side Switch D DRAIN connected to TAB G GD S Top View Ordering Information: SUP80N15-20L S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS |
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Vishay Siliconix |
N-Channel MOSFET ID (A)a 30 30 rDS(on) (W) 0.018 @ VGS = 10 V 0.020 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested TO-252 D Drain Connected to Tab G D S G Top View Order Number: SUD45N05-20L N-Channel MOSFET ABS |
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Vishay Siliconix |
Power MOSFET 600 4.4 • • • • • • • • Surface Mount (IRFBC20S/SiHFBC20S) Low-Profile Through-Hole (IRFBC20L/SiHFBC20L) Available in Tape and Reel (IRFBC20S/SiHFBC20S) Dynamic dV/dt Rating 150 °C Operating Temperature Fast Switching Fully Avalanche Rated Lead (Pb |
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Vishay Siliconix |
Power MOSFET • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBF20S, SiHFBF20S) • Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) • Available in Tape and Reel (IRFBF20S, SiHFBF20S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fa |
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Vishay |
Standard Recovery Diodes • Wide current range • High voltage ratings up to 3000 V • High surge current capabilities • Diffused junction • Hockey PUK version • Case style B-PUK (DO-200AB) • Material categorization: for definitions of compliance please see www.vishay.com/doc?9 |
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Vishay |
Automotive N-Channel MOSFET • TrenchFET® power MOSFET • 100 % Rg and UIS tested • AEC-Q101 qualified d • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D TO-252 Drain connected to tab G S D G Top View S N-Channel MOSFET ABSOLUTE |
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Vishay |
Power MOSFET • Surface mount • Available in tape and reel • Dynamic dV/dt rating Available • Repetitive avalanche rated • Fast switching Available • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance |
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Vishay |
Fast Recovery Diodes • High power FAST recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 3000 V • High current capability RoHS COMPLIANT • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse |
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Desde 2024. D4U Semiconductor.
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