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SQD30N05-20L |
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| Part Number | SQD30N05-20L |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | OF CHANGE S15-1873-Rev. D, 10-Aug-15 7 Document Number: 67054 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCR... |
| Features |
• TrenchFET® power MOSFET • 100 % Rg and UIS tested • AEC-Q101 qualified d • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D TO-252 Drain connected to tab G S D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b TC = 25 °C a TC = 125 °C VDS VGS ID IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissip... |
| Document |
 SQD30N05-20L Data Sheet
PDF 206.18KB |
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Desde 2024. D4U Semiconductor.
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