UnitedSiC UJ3 Hoja de datos

No.	parte #	Fabricante	Descripción
1	UJ3N1701K2	UnitedSiC	JFET w Typical on-resistance RDS(on),typ of 1.1W w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w RoHS compliant Typical applications w Ov
2	UJ3C120150K3S	UnitedSiC	MOSFET w Typical on-resistance RDS(on),typ of 150mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 Typical applications w EV charging w PV inverters w Switch m
3	UJ3C065080B3	UnitedSiC	MOSFET w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 Part Number UJ3C065080B3 Package D2PAK-3L
4	UJ3C065080K3S	UnitedSiC	MOSFET w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 Typical applications w EV charging w PV inverters w Switch mo
5	UJ3D1220KSD	UnitedSiC	1200V SiC Schottky Diode
6	UJ3C120080K3S	UnitedSiC	MOSFET S (3) Marking UJ3C120080K3S w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 Typical appli
7	UJ3N120035K3S	UnitedSiC	JFET w Typical on-resistance RDS(on),typ of 35mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w RoHS compliant Typical Applications w O
8	UJ3C065080T3S	UnitedSiC	MOSFET w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 Typical applications w EV charging w PV inverters w Switch mo
9	UJ3N120070K3S	UnitedSiC	JFET w Typical on-resistance RDS(on),typ of 70mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w RoHS compliant Typical Applications w O
10	UJ3D06510TS	UnitedSiC	650V SiC Schottky Diode
11	UJ3N065080K3S	UnitedSiC	MOSFET w Typical on-resistance RDS(on),typ of 80mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w RoHS compliant Typical Applications w O
12	UJ3N065025K3S	UnitedSiC	SiC Normally-On JFET w Typical on-resistance RDS(on),typ of 25mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w RoHS compliant Typical Applications w O
13	UJ3D06506TS	UnitedSiC	SiC Schottky Diode
14	UJ3D1205TS	UnitedSiC	1200V SiC Schottky Diode
15	UJ3D1250K	UnitedSiC	1200V SiC Schottky Diode
16	UJ3C065030B3	UnitedSiC	MOSFET w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 Part Number UJ3C065030B3 Package D2PAK-3L
17	UJ3D06512TS	UnitedSiC	650V SiC Schottky Diode
18	UJ3D06560KSD	UnitedSiC	650V 60A SiC Merged PiN-Schottky Diode • 175°C maximum operating junction temperature • Easy paralleling • Extremely fast switching not dependent on temperature • No reverse or forward recovery • Enhanced surge current capability, MPS structure • Excellent thermal performance, Ag
19	UJ3D06520TS	UnitedSiC	650V SiC Schottky Diode
20	UJ3D06516TS	UnitedSiC	650V SiC Schottky Diode