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UJ3N120070K3S |
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| Part Number | UJ3N120070K3S |
| Manufacturer | UnitedSiC |
| Description | United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and ... |
| Features |
w Typical on-resistance RDS(on),typ of 70mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w RoHS compliant
Typical Applications
w Over current protection circuits w DC-AC inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating
Maximum Ratings
Parameter
Symbol
Test Conditions
Drain-source voltage Gate-source voltage
VDS DC
VGS AC (1)
Continuous drain current (2)
Pulsed drain current (3) Power dissipation Maximum junctio... |
| Document |
 UJ3N120070K3S Data Sheet
PDF 388.93KB |
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Desde 2024. D4U Semiconductor.
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