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P-CHANNEL MOSFET * RDS(ON) ≤ 26 mΩ @ VGS=-10V, ID=-18A * RDS(ON) ≤ 45 mΩ @ VGS=-4.5V, ID=-10A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Orde |
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P-CHANNEL MOSFET * RDS(ON) ≤ 45 mΩ @ VGS=-10V, ID= -12A * RDS(ON) ≤ 69 mΩ @ VGS=-4.5V, ID= -8.0A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free H |
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N-CHANNEL MOSFET * RDS(ON) < 15mΩ @ VGS =10 V, ID =20 A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free Pa |
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N-CHANNEL ENHANCEMENT MODE Power MOSFET * RDS(ON)< 8.5mΩ @VGS=10V * RDS(ON)< 14mΩ @VGS=4.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain Lead-free: UTD452L Halogen-free: UTD452G 1.Gate 3.Source ORDERING INFORMATION Nor |
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N-CHANNEL MOSFET * RDS(on) < 7.5 mΩ @ VGS=4.5V, ID=15A RDS(on) < 10 mΩ @ VGS=2.5 V, ID=12A * High switching speed * Low gate charge SYMBOL Drain (5, 6, 7, 8) Power MOSFET Gate (1, 3) Source (2, 4) ORDERING INFORMATION Ordering Number UTD02R075G-S08-R Note: |
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N-CHANNEL MOSFET ould be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction-to-Ambient (Note 3) Junction-to-Case SYMBOL θJA θJC MIN TYP 250 75 ELECTRICAL CHA |
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Desde 2024. D4U Semiconductor.
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