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UTD351 |
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| Part Number | UTD351 |
| Manufacturer | UTC |
| Description | As N-Channel Logic Level MOSFET, UTD351 has been optimized for battery power management applications. And it’s produced using UTC’s Trench process. SYMBOL ORDERING INFORMATION Order Number UTD35... |
| Features |
ould be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA PARAMETER Junction-to-Ambient (Note 3) Junction-to-Case SYMBOL θJA θJC MIN TYP 250 75 ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) MAX UNIT °C/W °C/W PARAMETER SYMBOL TEST CONDITIONS MIN TYP OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Breakdown Voltage Temperature Coefficient BVDSS IDSS IGSS VGS =0 V, ID =250 µA VDS =24 V, VGS =0 V VGS = ±20V, VDS = 0 V ... |
| Document |
 UTD351 Data Sheet
PDF 340.34KB |
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Desde 2024. D4U Semiconductor.
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