UNIKC P20 Hoja de datos

No.	parte #	Fabricante	Descripción
1	P2003ED	UNIKC	P-Channel MOSFET AX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = -250mA VDS = VGS, ID = -250mA VDS = 0V, VGS = ±25V -30 -1.0 -1.6 -3.0 ±100 Zero Gate Voltage Drain Current IDSS VDS = -24V,
2	P2003EVG	UNIKC	P-Channel MOSFET
3	P2003BEA	UNIKC	MOSFET
4	P2003EV	UNIKC	P-Channel MOSFET
5	P2003BEAA	UNIKC	MOSFET
6	P2003EEA	UNIKC	MOSFET
7	P2060ZTFS	UNIKC	N-Channel MOSFET
8	P2003NV	UNIKC	P-Channel MOSFET
9	P2003BDG	UNIKC	N-Channel MOSFET
10	P2060ZTF	UNIKC	N-Channel MOSFET
11	P2003BT	UNIKC	N-Channel MOSFET Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 30 1 1.6 2.5 ±250 Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 On-State Drain Current1 ID(ON) VDS
12	P2060ZT	UNIKC	N-Channel MOSFET Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±30V 600 V 2 3.1
13	P2003ETF	UNIKC	P-Channel MOSFET rce Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±25V -30 V -1 -1.5 -3 ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V VDS = -20V,
14	P2003BVT	UNIKC	N-Channel MOSFET
15	P2003BV	UNIKC	N-Channel MOSFET
16	P2003EV8	UNIKC	P-Channel MOSFET
17	P2003BVG	UNIKC	N-Channel Enhancement Mode MOSFET te Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±25V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 55 °C VDS
18	P2003BE	UNIKC	MOSFET
19	P2003EEAA	UNIKC	MOSFET
20	P2003HV	UNIKC	N-Channel MOSFET