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P2003ETF |
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| Part Number | P2003ETF |
| Manufacturer | UNIKC |
| Description | P2003ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -26A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST ... |
| Features |
rce Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
V(BR)DSS VGS(th) IGSS
VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±25V
-30 V
-1 -1.5 -3 ±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V , TJ = 125 °C
1 mA
10
Drain-Source On-State Resistance1 RDS(ON)
Forward Transconductance1 On-State Drain Current1
gfs ID(ON)
VGS = -4.5V, ID = -12A VGS = -10V, ID = -18A VDS = -5V, ID = -18A VDS = -5V, VGS = -10V
23 16 29 -120
35 mΩ
20 S A
DYNAMIC
Input Capacitance
Ciss
1290
Output Capacitance
Coss
VGS = 0V, VDS = -15V, f = 1... |
| Document |
 P2003ETF Data Sheet
PDF 468.45KB |
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