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Truesemi |
500V N-Channel MOSFET • • • • • • 20.0A, 500V, RDS(on) = 0.26Ω @VGS = 10 V Low gate charge ( typical 70nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability { D ● ◀ G { G D S ▲ ● ● {S TO-3P or TO247 Absolute Maximum Ratings Symbol VDS |
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Truesemi |
N-Channel MOSFET • 20A,500V,Max.RDS(on)=0.26Ω @ VGS =10V • Low gate charge(typical 70nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol Parameter Value VDSS |
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Truesemi |
N-Channel MOSFET • 18.0A,500V,Max.RDS(on)=0.38Ω @ VGS =10V • Low gate charge(typical 50nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol Parameter Value VD |
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Truesemi |
N-Channel MOSFET • 700V @TJ = 150 ℃ • Typ. RDS(on) = 0.27Ω • Ultra Low gate charge (typ. Qg = 43nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Co |
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Truesemi |
N-Channel MOSFET • 10.0A, 800V, RDS(on) = 1.10Ω @VGS = 10 V • Low gate charge ( typical 45nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability G DS TO-3P or TO247 Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol |
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Truesemi |
N-Channel MOSFET • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.16Ω • Ultra Low Gate Charge (typ. Qg = 63nC) • 100% avalanche tested • Rohs Compliant Absolute Maximum Ratings Symbol Parameter VDSS ID IDM Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuo |
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Truesemi |
N-Channel MOSFET • 9.0A, 900V, RDS(on) = 1.4 @VGS = 10 V • Low gate charge ( typical 45nC) • Fast switching • 100% avalanche tested • Improved dv/dt capability • ESD improved capability GD S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Paramet |
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Truesemi |
N-Channel MOSFET • 9.0A,900V,Max.RDS(on)=1.40Ω @ VGS =10V • Low gate charge(typical 52nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDS |
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Truesemi |
N-Channel MOSFET • 16.0A,500V,Max.RDS(on)=0.38Ω @ VGS =10V • Low gate charge(typical 45nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol Parameter Value VD |
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Truesemi |
N-Channel MOSFET • 550V @TJ = 150 ℃ • Typ. RDS(on) = 0.21Ω • Ultra Low gate charge (typ. Qg = 43nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Co |
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Truesemi |
N-Channel MOSFET • 11A,900V,Max.RDS(on)=1.20Ω @ VGS =10V • Low gate charge(typical 52nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS |
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Truesemi |
N-Channel MOSFET • 18.0A,500V,Max.RDS(on)=0.31 Ω @ VGS =10V • Low gate charge(typical 45nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS |
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Truesemi |
N-Channel MOSFET • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.24Ω • Ultra Low gate charge (typ. Qg = 43nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -C |
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Truesemi |
N-Channel MOSFET • 700V @TJ = 150 ℃ • Typ. RDS(on) = 0.16Ω • Ultra Low gate charge (typ. Qg = 70nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuo |
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Truesemi |
N-Channel MOSFET • 24A,500V,Max.RDS(on)=0.2 Ω @ VGS =10V • Low gate charge(typical 90nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol Parameter Value VDSS |
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Truesemi |
N-Channel MOSFET • Fast-Recovery body diode • Extremely Low Reverse Recovery Charge • 650V @TJ = 150 ℃ • Typ. RDS(on) = 60mΩ • Ultra Low gate charge (typ. Qg = 170nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter D |
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Truesemi |
N-Channel MOSFET • 650V @TJ = 150 ℃ • Typ. RDS(on) = 60mΩ • Ultra Low gate charge (typ. Qg = 170nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuo |
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Truesemi |
N-Channel MOSFET • 11A,900V,Max.RDS(on)=1.20Ω @ VGS =10V • Low gate charge(typical 45nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol Parameter Value VDSS |
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Truesemi |
N-Channel MOSFET • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.16Ω • Ultra Low gate charge (typ. Qg = 70nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuo |
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Truesemi |
N-Channel MOSFET • 850V @TJ = 150 ℃ • Typ. RDS(on) = 0.21Ω • Ultra Low gate charge (typ. Qg = 27.5nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) - |
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Desde 2024. D4U Semiconductor.
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