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TSA23N50M |
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| Part Number | TSA23N50M |
| Manufacturer | Truesemi |
| Description | This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching... |
| Features |
• 20A,500V,Max.RDS(on)=0.26Ω @ VGS =10V • Low gate charge(typical 70nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS EAR dv/dt Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC = 25℃ TC = 100℃ (Note 1) (Note 2) (N... |
| Document |
 TSA23N50M Data Sheet
PDF 396.96KB |
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Desde 2024. D4U Semiconductor.
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