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TriQuint Semiconductor |
18-27.5 GHz 1W Power Amplifier • 0.25 um pHEMT Technology • 14 dB Nominal Gain at 23GHz • 30 dBm Nominal P1dB • 38dBm OTOI typical • Typical 15dB Input/Output RL • Bias 6 - 7V @ 540 mA • On-chip power detector diode Chip Dimensions 2.641 mm x 1.480 mm Primary Applications • Point |
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TriQuint Semiconductor |
27- 32 GHz 1.5 Watt Power Amplifier • • • • • • TGA1082B Prototype Part #, Production Part # TBD 0.25 um pHEMT Technology 22 dB Nominal Gain at 30GHz 1W Nominal Pout @ P1dB 1.5W Psat at 30GHz Bias 6 - 7V @ 960 mA Chip Dimensions 4.13mm x 3.3mm Primary Applications • • The TriQuint T |
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TriQuint Semiconductor |
18-27 GHz 1W Power Amplifier • • • • • • • TGA1135B-SCC 0.25 um pHEMT Technology 14 dB Nominal Gain at 23GHz 29 dBm Nominal P1dB 37dBm OTOI typical Typical 15dB Input/Output RL Bias 6 - 7V @ 540 mA On-chip power detector diode Chip Dimensions 2.641 mm x 1.480 mm x 0.1016mm Pr |
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TriQuint Semiconductor |
2-20 GHz Wideband AGC Amplifier and Performance • • • • • • 0.5 um MESFET Technology 9 dB Nominal Gain 3.5 dB NF Typical Midband 17.5 dBm Nominal Pout @ P1dB Bias 5-8V @ 60 mA Dimensions 3.4 x 2.0 x 0.1 mm Primary Applications Chip Dimensions: 3.4 x 2.0 x 0.1 mm • • • Wideband Gai |
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TriQuint Semiconductor |
Ka Band 2 Watt Power Amplifier and Performance • • • • • • 0.25 um pHEMT Technology 20 dB Nominal Gain 2W Nominal Pout -30 dBc IMR3 @ 26 dBm SCL Bias 7V @ 1.4 A Chip Dimensions 5.89 mm x 3.66 mm TGA1055-EPU Primary Applications • • • LMDS Point-to-Point Radio Satellite Ground Te |
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TriQuint Semiconductor |
36 - 40 GHz Power Amplifier and Performance Primary Applications • • The TriQuint TGA1071-EPU is a two stage PA MMIC design using TriQuint’ s proven 0.25 um Power pHEMT process to support a variety of millimeter wave applications including point-to-point digital radio and poin |
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TriQuint Semiconductor |
23 - 29 GHz High Power Amplifier and Performance • • • • • • • • 0.25um pHEMT Technology 23 GHz - 29 GHz Frequency Range Nominal 1 Watt (28GHz) @ P1dB Nominal Gain of 23 dB OTOI 38 dBm typical (Linear Mode) Bias 7V @ 400 mA Idq (Sat Power mode) Bias 7V @ 650 mA Idq (Linear mode) Chi |
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TriQuint Semiconductor |
33-36 GHz 2W Power Amplifier • 0.25 um pHEMT Technology • 17 dB Nominal Gain • 31 dBm Pout @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ 1.5A Primary Applications • Military Radar Systems • Ka Band Sat-Com • Point-to-Point Radio Chip Dimensions 4.13 mm x 3.3 mm ( ) Waf |
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TriQuint Semiconductor |
11-Output Configurable Clock Buffer • Wide frequency range: 24 MHz to 105 MHz • Output configurations: Four outputs at fREF Four outputs at fREF /2 Two outputs at fREF /2 ␣ ␣ ␣ ␣ with adjustable phase ␣ ␣ ␣ ␣ ␣ ␣ ␣ ␣ ␣ ␣ ␣ or Five outputs at 2x fREF Three outputs at fREF Two outputs at |
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TriQuint Semiconductor |
11-Output Clock Buffer • Operates from 30 MHz to 67MHz • Pin-to-pin output skew of 250 ps (max) • Period-to-period jitter: 75 ps (typ) • Near-zero propagation delay: –350 ps ± 500 ps or –350 ps ± 1000 ps • 10 symmetric, TTL-compatible outputs with 30 mA drive and rise and |
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TriQuint Semiconductor |
11-Output Configurable Clock Buffer • Wide frequency range: 24 MHz to 105 MHz • Output configurations: five outputs at fREF five outputs at fREF /2 or six outputs at 2x fREF four outputs at fREF • Low output-to-output skew: 150 ps (max) within a group SYSTEM TIMING PRODUCTS Q0 14 GN |
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TriQuint Semiconductor |
11-Output Configurable Clock Buffer • Wide frequency range: 18 MHz to 105 MHz • Output configurations: three outputs at 1/2 fREF three outputs at fREF four outputs at fREF with adjustable phase or two outputs at fREF four outputs at 2x fREF four outputs at 2x fREF with adjustable phase |
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TriQuint Semiconductor |
Ku Band Power Amplifier and Performance • • • • • HFET Technology 12.5 -15.5 GHz Frequency Range > 3W Nominal Pout 24 dB Nominal Gain 9V @ 1.2A Bias Primary Applications • • • Ku band Satellite Ground Terminal VSAT Point-to-Point Radio Release Status • Engineering Prototy |
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TriQuint Semiconductor |
26- 34 GHz Medium Power Amplifier and Performance • • • • • • 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL Bias 5 - 7V @ 220 mA Chip Dimensions 1.95 mm x 1.12 mm Primary Applications • The TriQuint TGA1073A-SCC is a three stage |
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TriQuint Semiconductor |
36 - 40 GHz Power Amplifier and Performance • • • • • • 0.25um pHEMT Technology 36-40 GHz Frequency Range 26 dBm Nominal Pout @ P1dB, 38GHz 15 dB Nominal Gain Bias 5-7V @ 240 mA Chip Dimensions 2.4 mm x 1.45 mm Primary Applications • The TriQuint TGA1073C-SCC is a two stage PA |
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TriQuint Semiconductor |
19 - 27 GHz Medium Power Amplifier and Performance • • • • • 0.25 um pHEMT Technology 22 dB Nominal Gain 25 dBm Nominal Pout @ P1dB Bias 5-7V @ 220 mA Chip Dimensions 2.55 mm x 1.15mm Primary Applications The TriQuint TGA1073G-SCC is a three stage MPA MMIC design using TriQuint’s pro |
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TriQuint Semiconductor |
26-29 GHz Medium Power Amplifier and Performance • • • • • • Production version of TGA9058 0.25um pHEMT Technology 26 GHz - 29 GHz Frequency Range Nominal Pout 22dBm @ 1dB GC Nominal SS Gain 24dB 5V, 315mA Bias TGA1081-EPU Primary Applications • • LMDS Point-to-Point Radio 30 25 |
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TriQuint Semiconductor |
27 - 32 GHz 1W Power Amplifier • 0.25 um pHEMT Technology • 18 dB Gain at 28 GHz • 29 dBm Nominal P1dB • 37dBm OTOI typical at 28GHz • Input/Output RL < -10 dB • Bias 6 - 7V @ 630 mA Chip Dimensions 2.69 mm x 1.37 mm Small Signal Gain 15 10 Return g Loss (dB) ( ) 25 Primary Appl |
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TriQuint Semiconductor |
Ka Band Low Noise Amplifier and Performance • • • • • • 0.15um pHEMT Technology 21-27 GHz Frequency Range 2 dB Nominal Noise Figure 19 dB Nominal Gain 12 dBm Pout 3V, 45 mA Chip Dimensions 1.985 mm x .980 mm Primary Applications • • Point-to-Point Radio Point-to-Multipoint Co |
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TriQuint Semiconductor |
Ka Band Low Noise Amplifier and Performance • • • • • • 0.15um pHEMT Technology 21-27 GHz Frequency Range 1.75 dB Nominal Noise Figure 19 dB Nominal Gain 8dBm Pout 3V, 45 mA Self -biased Point-to-Point Radio Point-to-Multipoint Communications 5 0 -5 Chip Dimensions 2.235 mm x |
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Desde 2024. D4U Semiconductor.
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