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TGA1135B |
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| Part Number | TGA1135B |
| Manufacturer | TriQuint Semiconductor |
| Description | Advance Product Information Feb 4, 2000 18-27.5 GHz 1W Power Amplifier TGA1135B Key Features • 0.25 um pHEMT Technology • 14 dB Nominal Gain at 23GHz • 30 dBm Nominal P1dB • 38dBm OTOI typical • Ty... |
| Features |
• 0.25 um pHEMT Technology • 14 dB Nominal Gain at 23GHz • 30 dBm Nominal P1dB • 38dBm OTOI typical • Typical 15dB Input/Output RL • Bias 6 - 7V @ 540 mA • On-chip power detector diode Chip Dimensions 2.641 mm x 1.480 mm Primary Applications • Point-to-Point Radio • Point-to-Multipoint Communications • Ka Band Sat-Com TGA1135B Fixtured Amplifier Typical Small Signal Data Wafer 993150303, 6V/540mA 18 16 14 12 10 S21 (dB) 8 6 4 2 0 -2 -4 -6 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz) TGA1135B Nominal Output Power Wafer 993150303, Idq=540mA 32 31.5 31 30.5 P1dB... |
| Document |
 TGA1135B Data Sheet
PDF 1.37MB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | TGA1135B-SCC |
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18-27 GHz 1W Power Amplifier |
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| 2 | TGA1141 |
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| 6 | TGA1172-SCC |
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Desde 2024. D4U Semiconductor.
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