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Schottky barrier Diodes z Small surface mounting type z Low reverse current and low forward voltage z High reliability Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forwa |
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Schottky barrier Diodes Small surface mounting type Low reverse current and low forward voltage High reliability SOD-723 MARKING: 5 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak reverse voltage DC reverse voltage Mean rectifying cur |
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SCHOTTKY BARRIER DIODE Power dissipation PD: 200 mW (Tamb=25℃) Collector current IF: 30 mA Collector-base voltage VR: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ CIRCUIT: SOT-523 1 3 2 MARKING: 3D ELECTRICAL CHARACTERISTICS (Tamb=25℃ |
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SCHOTTKY BARRIER DIODE Power dissipation PD: 200 mW (Tamb=25℃) Collector current IF: 30 mA Collector-base voltage VR: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ CIRCUIT: 1. 30¡ À0. 03 SOT-323 1. 25¡ À0. 05 2. 30¡ À0. 05 Unit: mm 0. 30 |
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Schottky Diodes z High current rectifier Schottky diode z Low voltage, low inductance z For power supply MAKING: 5 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Peak reverse voltage DC reverse voltage Mean rectifyi |
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SCHOTTKY BARRIER DIODE Power dissipation PD: 200 mW (Tamb=25℃) Collector current IF: 30 mA Collector-base voltage VR: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ CIRCUIT: 1. 30¡ À0. 03 SOT-323 1. 25¡ À0. 05 2. 30¡ À0. 05 Unit: mm 0. 30 |
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Desde 2024. D4U Semiconductor.
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