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RB717F |
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| Part Number | RB717F |
| Manufacturer | Transys |
| Description | 1. 01 REF RB717F SCHOTTKY BARRIER DIODE FEATURES: Power dissipation PD: 200 mW (Tamb=25℃) Collector current IF: 30 mA Collector-base voltage VR: 40 V Operating and storage junction temperature range ... |
| Features |
Power dissipation PD: 200 mW (Tamb=25℃)
Collector current IF: 30 mA
Collector-base voltage VR: 40 V
Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
CIRCUIT:
1. 30¡ À0. 03
SOT-323
1. 25¡ À0. 05 2. 30¡ À0. 05
Unit: mm
0. 30 2. 00¡ À0. 05
1 3
2
MARKING: 3E
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Reverse breakdown voltage Reverse voltage leakage current
Symbol V(BR) IR
Test conditions
IR= 100µA
VR=10V
MIN MAX 40
1
Forward voltage
VF IF=1mA
0.37
Diode capacitance
CD VR=1V, f=1MHz
5
UNIT V
µA
V
pF
... |
| Document |
 RB717F Data Sheet
PDF 60.57KB |
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