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Toshiba |
MOSFETs (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 16 nC (typ.) Low drain-source on-resistance: RDS(ON) = 1.1 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V |
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Toshiba |
Silicon N-channel MOSFET (1) High-speed switching (2) Small gate charge: QSW = 10.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 1.7 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 |
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Toshiba |
Silicon N-channel MOSFET (1) High-speed switching (2) Small gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 44 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V |
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Toshiba |
Silicon N-channel MOSFET (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 168 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 |
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Toshiba |
Silicon N-channel MOSFET (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA) 3. Pa |
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Toshiba |
Silicon N-channel MOSFET (1) High-speed switching (2) Small gate charge: QSW = 23 nC (typ.) (3) Small output charge: Qoss = 85.4 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.7 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) En |
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Toshiba |
Silicon N-channel MOSFET (1) High-speed switching (2) Small gate charge: QSW = 19 nC (typ.) (3) Small output charge: Qoss = 51 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.61 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enh |
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Toshiba |
Silicon N-channel MOSFET (1) High-speed switching (2) Small gate charge : QSW = 19 nC (typ.) (3) Small output charge : Qoss = 51 nC (typ.) (4) Low drain-source on-resistance : RDS(ON) =1.9 mΩ (typ.)(VGS = 10 V ) (5) Low leakage current : IDSS = 10 µA (max)(VDS = 60 V ) (6) E |
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Toshiba |
Field Effect Transistor (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 13 nC (typ.) Low drain-source on-resistance: RDS(ON) = 7.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = |
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Toshiba |
MOSFETs (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 2.0 nC (typ.) Low drain-source on-resistance: RDS(ON) = 12.6 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 |
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Toshiba |
Silicon N-Channel MOSFET (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 8.1 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 10.1 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = |
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Toshiba |
MOSFETs (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 2.5 nC (typ.) Low drain-source on-resistance: RDS(ON) = 10.2 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 |
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Toshiba |
MOSFETs (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 19 nC (typ.) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 |
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Toshiba |
MOSFETs (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 14 nC (typ.) Low drain-source on-resistance: RDS(ON) = 6.1 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 |
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Toshiba |
N-Channel MOSFET (1) High-speed switching (2) Small gate charge: QSW = 28 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, |
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Toshiba |
Silicon N-channel MOSFET (1) High-speed switching (2) Small gate charge: QSW = 3.9 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 4.9 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 |
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Toshiba |
Silicon N-channel MOSFET (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 50 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V |
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Toshiba |
Silicon N-channel MOSFET (1) High-speed switching (2) Small gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V |
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Toshiba |
Silicon N-channel MOSFET (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V |
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Toshiba |
Silicon N-channel MOSFET (1) High-speed switching (2) Small gate charge: QSW = 17 nC (typ.) (3) Small output charge: Qoss = 56 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.0 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enha |
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Desde 2024. D4U Semiconductor.
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