TPH1110ENH Toshiba Silicon N-channel MOSFET Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

TPH1110ENH

Toshiba
TPH1110ENH
TPH1110ENH TPH1110ENH
zoom Click to view a larger image
Part Number TPH1110ENH
Manufacturer Toshiba (https://www.toshiba.com/)
Title Silicon N-channel MOSFET
Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit ...

Document Datasheet TPH1110ENH Data Sheet
PDF 234.38KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 TPH1110FNH
Toshiba
Silicon N-channel MOSFET Datasheet
2 TPH11003NL
Toshiba
MOSFETs Datasheet
3 TPH11006NL
Toshiba
Silicon N-channel MOSFET Datasheet
4 TPH100A
Topstek
Current Transducers Datasheet
5 TPH10A-LTC
Topstek
Current Transducers Datasheet
6 TPH12.5A-LTC
Topstek
Current Transducers Datasheet
More datasheet from Toshiba
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad