TPH1110ENH |
Part Number | TPH1110ENH |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Title | Silicon N-channel MOSFET |
Features |
(1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
... |
Document |
TPH1110ENH Data Sheet
PDF 234.38KB |
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