No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
2SK3868 (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/volta |
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Toshiba Semiconductor |
2SK3869 usly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tem |
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Toshiba Semiconductor |
N-Channel MOSFET |
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Toshiba Semiconductor |
2SK389 |
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Toshiba Semiconductor |
2SK3842 tinuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operatin |
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Toshiba Semiconductor |
N-Channel MOSFET tinuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operatin |
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Toshiba Semiconductor |
CMOS 8-BIT MICROCONTROLLER |
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Toshiba Semiconductor |
TMP87CK38N 4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataShe |
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Toshiba Semiconductor |
CMOS 8-BIT MICROCONTROLLER |
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Toshiba Semiconductor |
CMOS 8-BIT MICROCONTROLLER |
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Toshiba Semiconductor |
N-Channel MOSFET ance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch –c) Rth (ch –a) Max 5.0 62.5 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 97 µH, IAR = 26 A, |
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Toshiba Semiconductor |
N-Channel MOSFET o case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 4.17 83.3 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 48 μH, RG = 25 Ω, IAR = 32 A Not |
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Toshiba Semiconductor |
N-Channel MOSFET (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/volta |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET e Gain Noise Voltage Total Harmonic Distortion Time Output Stability Symbol IDSS ID VDS = 2 V, VGS = 0 VDD = 2 V, RL= 2.2kΩ,Cg = 5pF Test Condition Min 140 ⎯ -0.1 0.9 -20 ⎯ -3.0 ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 1.3 ⎯ 3.5 -0.5 0 -0.8 25 0.7 100 Max 350 370 -1.0 ⎯ |
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Toshiba Semiconductor |
N-Channel MOSFET esistance, channel to case Symbol Rth (ch –c) Max 1.0 Unit °C/W 1 4 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 100 µH, IAR = 75 A, RG = 25 Ω Note 3: Repetitive rating: pulse width |
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Toshiba Semiconductor |
N-Channel MOSFET s (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/volt |
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Toshiba Semiconductor |
N-Channel MOSFET (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating c |
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Toshiba Semiconductor |
N-Channel MOSFET mperature range JEDEC JEITA TOSHIBA SC-64 2-7B5B Weight: 0.36 g (typ.) 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 1.1 ± 0.2 V 2.3 2.3 0.6 MAX. ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the |
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Toshiba Semiconductor |
N-Channel MOSFET ads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vo |
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