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Toshiba Semiconductor K38 DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
K3868

Toshiba Semiconductor
2SK3868
(e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/volta
Datasheet
2
K3869

Toshiba Semiconductor
2SK3869
usly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tem
Datasheet
3
2SK389

Toshiba Semiconductor
N-Channel MOSFET
Datasheet
4
K389

Toshiba Semiconductor
2SK389
Datasheet
5
K3842

Toshiba Semiconductor
2SK3842
tinuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operatin
Datasheet
6
2SK3842

Toshiba Semiconductor
N-Channel MOSFET
tinuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operatin
Datasheet
7
TMP87CK38N

Toshiba Semiconductor
CMOS 8-BIT MICROCONTROLLER
Datasheet
8
87CK38N

Toshiba Semiconductor
TMP87CK38N
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Datasheet
9
TMP87CK38F

Toshiba Semiconductor
CMOS 8-BIT MICROCONTROLLER
Datasheet
10
TMP87CK38N

Toshiba Semiconductor
CMOS 8-BIT MICROCONTROLLER
Datasheet
11
2SK3846

Toshiba Semiconductor
N-Channel MOSFET
ance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch
  –c) Rth (ch
  –a) Max 5.0 62.5 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 97 µH, IAR = 26 A,
Datasheet
12
2SK3847

Toshiba Semiconductor
N-Channel MOSFET
o case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 4.17 83.3 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 48 μH, RG = 25 Ω, IAR = 32 A Not
Datasheet
13
2SK3868

Toshiba Semiconductor
N-Channel MOSFET
(e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/volta
Datasheet
14
2SK3857TK

Toshiba Semiconductor
Silicon N-Channel MOSFET
e Gain Noise Voltage Total Harmonic Distortion Time Output Stability Symbol IDSS ID VDS = 2 V, VGS = 0 VDD = 2 V, RL= 2.2kΩ,Cg = 5pF Test Condition Min 140 ⎯ -0.1 0.9 -20 ⎯ -3.0 ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 1.3 ⎯ 3.5 -0.5 0 -0.8 25 0.7 100 Max 350 370 -1.0 ⎯
Datasheet
15
2SK3843

Toshiba Semiconductor
N-Channel MOSFET
esistance, channel to case Symbol Rth (ch
  –c) Max 1.0 Unit °C/W 1 4 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 100 µH, IAR = 75 A, RG = 25 Ω Note 3: Repetitive rating: pulse width
Datasheet
16
2SK3844

Toshiba Semiconductor
N-Channel MOSFET
s (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/volt
Datasheet
17
2SK3845

Toshiba Semiconductor
N-Channel MOSFET
(typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating c
Datasheet
18
2SK3863

Toshiba Semiconductor
N-Channel MOSFET
mperature range JEDEC JEITA TOSHIBA SC-64 2-7B5B Weight: 0.36 g (typ.) 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 1.1 ± 0.2 V 2.3 2.3 0.6 MAX. ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Datasheet
19
2SK3869

Toshiba Semiconductor
N-Channel MOSFET
ads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vo
Datasheet



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