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2SK3846 |
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| Part Number | 2SK3846 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SK3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOSIII) 2SK3846 Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward... |
| Features |
ance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch –c) Rth (ch –a) Max 5.0 62.5 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 97 µH, IAR = 26 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-09-27 2SK3846 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain –source breakdown voltage Gate threshold voltage Drain –source ON... |
| Document |
 2SK3846 Data Sheet
PDF 215.71KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK3842 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 2 | 2SK3843 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 3 | 2SK3844 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 4 | 2SK3845 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 5 | 2SK3847 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 6 | 2SK3800 |
Sanken |
MOSFET |
|
Desde 2024. D4U Semiconductor.
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