Toshiba Semiconductor K29 Hoja de datos

No.	parte #	Fabricante	Descripción
1	K2996	Toshiba Semiconductor	2SK2996 ously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating te
2	K2962	Toshiba Semiconductor	2SK2962 eavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/cur
3	K2961	Toshiba Semiconductor	2SK2961 e in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliabi
4	K2917	Toshiba Semiconductor	2SK2917 y loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/curren
5	K2915	Toshiba Semiconductor	2SK2915 sing continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
6	K2968	Toshiba Semiconductor	2SK2968 s Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 0.833 50 Unit °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch =
7	2SK2993	Toshiba Semiconductor	N-Channel MOSFET case Thermal resistance, channel to ambient ymbol Rth (ch−c) 1. Rth (ch−a) 83. Max 25 3 Unit °C / W °C / W Note 1: Please u se d evices o n co ndition t hat t he channel te mperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.79
8	2SK2914	Toshiba Semiconductor	Silicon N Channel MOS Type Field Effect Transistor heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/cu
9	2SK2915	Toshiba Semiconductor	N-Channel MOSFET sing continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
10	2SK2967	Toshiba Semiconductor	Silicon N Channel MOS Type Field Effect Transistor ote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions
11	2SK2991	Toshiba Semiconductor	Silicon N Channel MOS Type Field Effect Transistor ant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the approp
12	2SK2992	Toshiba Semiconductor	Silicon N Channel MOS Type Field Effect Transistor : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
13	2SK2998	Toshiba Semiconductor	Silicon N Channel MOS Type Field Effect Transistor even if the operating conditions (i.e. operating temperature/current/voltage, JEITA TOSHIBA — 2-5J1C etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Weight: 0.36 g
14	3SK294	Toshiba Semiconductor	Silicon N-Channel Dual Gate MOS Type FET
15	K2995	Toshiba Semiconductor	2SK2995 o case Thermal resistance, channel to ambient ymbol Rth (ch−c) 1. Rth (ch−a) 41. Max 39 6 Unit °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.74 mH,
16	2SK2920	Toshiba Semiconductor	Silicon N-Channel MOS Type Field Effect Transistor 0 200 ±20 5 20 20 65 5 2 150 −55 to 150 V V V A A W mJ A mJ °C °C 2.3 ± 0.15 2.3 ± 0.15 1. GATE 2. DRAIN （HEAT SINK） 3. SOURSE 2 1 3 JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the
17	2SK2949	Toshiba Semiconductor	Silicon N Channel MOS Type Field Effect Transistor significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design t
18	2SK2952	Toshiba Semiconductor	N-CHANNEL MOS TYPE TRANSISTOR l to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 3.125 62.5 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C, L = 9.6 mH, RG = 25 Ω, IAR = 8.5
19	2SK2953	Toshiba Semiconductor	Silicon N Channel MOS Type Field Effect Transistor the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc
20	2SK2962	Toshiba Semiconductor	Silicon N Channel MOS Type Field Effect Transistor ly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tempe