| Description | 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.) z High forward transfer admittance : |Yfs| = 6.8 S (typ.) z Low leakage current :... |
| Features | ously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semicon... |
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| No. | Part # | Manufacture | Description | Datasheet |
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Toshiba Semiconductor |
2SK2993 |
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Toshiba Semiconductor |
2SK2995 |
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Fuji Electric |
N-channel MOS-FET |
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Fuji Electric |
2SK2902-01MR |
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Toshiba Semiconductor |
2SK2915 |
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Toshiba Semiconductor |
2SK2917 |
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Sanyo |
2SK2919 |
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Hitachi |
Silicon N-Channel MOSFET |
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Hitachi Semiconductor |
2SK2926 |
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Hitachi Semiconductor |
2SK2929 |
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