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Toshiba Semiconductor |
MOSFET |
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Toshiba Semiconductor |
Silicon N-Channel MOS Type FET ure/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maxim |
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Toshiba Semiconductor |
TK15A20D (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.12 Ω (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Sou |
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Toshiba Semiconductor |
TK15J50D in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliabil |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET ut capacitance Reverse transfer capacitance IDSS IGSS V (BR) DSS VDS (ON) VGS (OFF) |Yfs| Ciss Coss Crss VDS = 200 V, VGS = 0 VDS = 0V, VGS = ±20 V ID = 10 mA, VGS = 0 ID = 8 A, VGS = 10 V VDS = 10 V, ID = 0.1 A VDS = 10 V, ID = 5 A VDS = 30 V, VGS |
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Toshiba Semiconductor |
TK15A60D e 2: Drain 3: Source JEDEC ⎯ JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this |
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Toshiba Semiconductor |
2SK1529 er capacitance Symbol IDSS IGSS V (BR) DSS VDS (ON) VGS (OFF) |Yfs| Ciss Coss Crss Test Condition VDS = 180 V, VGS = 0 VDS = 0, VGS = ±20 V ID = 10 mA, VGS = 0 ID = 6 A, VGS = 10 V VDS = 10 V, ID = 0.1 A VDS = 10 V, ID = 3 A VDS = 30 V, VGS = 0, f = |
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Toshiba Semiconductor |
MOSFETs gy (Note 3) Channel temperature Storage temperature range (Note 4) (Note 4) GATE DRAIN （HEAT SINK） 3. SOURSE mJ 6.8 JEDEC A mJ °C °C ⎯ ⎯ 2-10W1A JEITA TOSHIBA Weight: 1.07 g (typ.) Thermal Characteristics Characteristics Thermal resistance, c |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET tc.) are within the JEITA TOSHIBA ― 2-1L1B absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 1.5 mg (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Meth |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absol |
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Toshiba Semiconductor |
MOSFETs (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.7 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (H |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET in the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test |
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Toshiba Semiconductor |
2SK1531 |
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Toshiba Semiconductor |
N-Channel MOSFET current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum r |
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Toshiba Semiconductor |
N-Channel MOSFET e 2: Drain 3: Source JEDEC ⎯ JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET or Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm2 × |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET ificantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handli |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET s (i.e. JEITA - operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the TOSHIBA 2-1L1B Weight: 1.5 mg (typ.) Toshiba Semiconductor Reliability Handbook |
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Toshiba Semiconductor |
High Speed Switching Applications . operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) an |
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Desde 2024. D4U Semiconductor.
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